Most of all, a synthesis of core-shell nanostructure is a considered method for strongly improving sensing properties of SnO 2 nanowires since surface states affects the sensing properties significantly. In recent years, many literatures have demonstrated that nanocompounds of SnO 2 and ZnO which belong to a hetero-combination acted with good chemical and physical properties exceeding to their individual materials. However, upgrading the optoelectronic sensitivity is still a challenge for SnO 2 nanostructure-based photodetectors. Owing to special physical and chemical characteristics of one-dimensional SnO 2 and ZnO nanowires, plenty of nanocompounds based on them have been widely applied to many industrial places, such as field emission devices, lithium-ion batteries, optoelectronic devices, and gas sensors. Furthermore, because of the very large length-to-diameter and surface-to-volume ratios in nanoscale regime, the gas sensing and optoelectronic properties of one-dimensional SnO 2 and ZnO nanostructures are highly sensitive to adsorbed species on their own surface. Tin dioxide (SnO 2) and zinc oxide (ZnO), world-renown n-type multifunctional semiconductors, have wide direct band-gap energy: 3.6 and 3.37 eV at 300 K, respectively. These results demonstrated that the SnO 2-ZnO core-shell nanowires have potential application as UV photodetectors with high photon-sensing properties. The result of UV light test shows that the recovery time of SnO 2-ZnO core-shell nanowires (ALD: 200 cycles) is 328 seconds, which is lower than pure SnO 2 nanowires (938 seconds). The result of electricity measurements shows that the resistance of SnO 2-ZnO core-shell nanowires (ALD: 200 cycles) is 925 Ω, which is much lower than pure SnO 2 nanowires (3.6 × 10 6 Ω). The diameter of SnO 2-ZnO core-shell nanowires is 100 nm by ALD 200 cycles. Zinc oxides deposited on Tin dioxide nanowires have been successfully synthesized by atomic layer deposition (ALD).
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